Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys-Reference-Cited by-同舟云学术

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

Published:2002-12-02 Issue:23 Volume:81 Page:4395-4397
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jena Debdeep,Heikman Sten,Green Daniel,Buttari Dario,Coffie Robert,Xing Huili,Keller Stacia,DenBaars Steve,Speck James S.,Mishra Umesh K.,Smorchkova Ioulia

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1526161

Reference13 articles.

1. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs

2. Spontaneous polarization and piezoelectric constants of III-V nitrides

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. High Al-content AlGaN/GaN MODFETs for ultrahigh performance

5. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

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