An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1674-1056/22/i=2/a=026103/pdf
Reference20 articles.
1. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
2. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
3. Calculations of two dimensional electron gas distributions in AlGaN/GaN material system
4. Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs
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