Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates-Reference-Cited by-同舟云学术

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Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates

Published:2010-11 Issue:1 Volume:43 Page:106-110
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ben Naceur H.,Mzoughi T.,Moussa I.,Nguyen L.,Rebey A.,El Jani B.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Indium segregation during multilayer InAs/GaAs(001) quantum dot formation

2. Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers

3. Surfactants in epitaxial growth

4. Effect of Bi surfactant on the heteroepitaxial growth in Fe/Cr(100) multilayers

5. Isoelectronic surfactant-induced surface step structure and correlation with ordering in GaInP

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1. The roles of Bi in InAs and InAsBi nanostructure growth;Journal of Materials Chemistry C;2024

2. Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD;Journal of Crystal Growth;2020-11

3. Az Miktarda Bizmut Eklenen Yarıiletken Alaşımlarının Optik Parametreleri;El-Cezeri Fen ve Mühendislik Dergisi;2020-09-04

4. Bismuth surface segregation and disorder analysis of quaternary (Ga,In)(As,Bi)/InP alloys;Journal of Applied Physics;2019-10-07

5. Indium Phosphide Bismide;Progress in Metallic Alloys;2016-10-19

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