Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors-Reference-Cited by-同舟云学术

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Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors

Published:2012-09 Issue: Volume:46 Page:174-176
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Asgari A.,Fazli N.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. High temperature electron transport properties in AlGaN/GaN heterostructures

2. Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

3. SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors

4. Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

5. Solid-State Light Sources Getting Smart

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1. Application of quantum dots in electronics;Green Sustainable Process for Chemical and Environmental Engineering and Science;2021

2. Oblique angle deposited InN quantum dots array for infrared detection;Journal of Alloys and Compounds;2018-10

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