Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3665124
Reference56 articles.
1. High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature
2. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes
3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers
4. The effect of temperature on the recombination rate of AlGaN/GaN light emitting diodes
5. Maximum low-temperature mobility of two-dimensional electrons in heterojunctions with a thick spacer layer
Cited by 57 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TCAD Modelling of Magnetic Hall Effect Sensors;Inventions;2024-07-10
2. Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28
3. Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier;Russian Microelectronics;2024-06
4. Exploring the impact of AlGaN barrier thickness and temperature on normally-on GaN HEMT performance;Engineering Research Express;2024-04-16
5. Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors;Applied Physics A;2023-07-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3