Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/8/087802/pdf
Reference23 articles.
1. Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
2. Gain spectra in cw InGaN/GaN MQW laser diodes
3. Origin of Luminescence from InGaN Diodes
4. Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells
5. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
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2. Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates;Chinese Physics B;2015-06
3. Investigation of self-focusing effects in wurtzite InGaN/GaN quantum dots;Optik - International Journal for Light and Electron Optics;2013-04
4. Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors;Physica E: Low-dimensional Systems and Nanostructures;2012-09
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