Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121855
Reference19 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
3. High responsitivity intrinsic photoconductors based on AlxGa1−xN
4. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
5. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
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1. Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures;Journal of Physics: Condensed Matter;2018-04-09
2. S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination;Physical Review B;2014-11-14
3. Enhanced UV luminescence from InAlN quantum well structures using two temperature growth;Journal of Luminescence;2014-11
4. GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers;Journal of Nanoscience and Nanotechnology;2014-02-01
5. Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes;Chinese Physics Letters;2009-08
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