Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures
Author:
Funder
Science Foundation Ireland
Engineering and Physical Sciences Research Council
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://iopscience.iop.org/article/10.1088/1361-648X/aab818/pdf
Reference28 articles.
1. Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures
2. Spatially resolved cathodoluminescence spectra of InGaN quantum wells
3. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
4. Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
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2. Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization;physica status solidi (b);2020-08-07
3. Correlation between growth interruption and indium segregation in InGaN MQWs;Journal of Luminescence;2020-05
4. Polar ( In , Ga ) N / GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem;Physical Review Applied;2020-04-27
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