Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization-Reference-Cited by-同舟云学术

Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization

Published:2020-08-07 Issue:12 Volume:257 Page:2000242
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Frankerl Christian¹²^ORCID,Nippert Felix²^ORCID,Hoffmann Marc Patrick¹,Brandl Christian¹,Lugauer Hans-Jürgen¹^ORCID,Zeisel Roland¹,Hoffmann Axel²,Davies Matthew John¹

Affiliation:

1. OSRAM Opto Semiconductors GmbH Leibnizstr. 4 Regensburg 93055 Germany

2. Institut für Festkörperphysik Technische Universität Berlin Hardenbergstr. 36 Berlin 10623 Germany

Funder

Bundesministerium für Wirtschaft und Energie

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000242

Reference33 articles.

1. Prospects for LED lighting

2. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

3. Effect of localized states on internal quantum efficiency of III-nitride LEDs

4. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

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