Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3520139
Reference20 articles.
1. Introduction
2. Performance of High-Power AlInGaN Light Emitting Diodes
3. Origin of efficiency droop in GaN-based light-emitting diodes
4. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
5. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density
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