Composition-dependent trapezoidal quantum barrier effect on efficiency droop in GaN-based light-emitting diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
https://link.springer.com/content/pdf/10.1007/s40042-023-00898-4.pdf
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5. M. Usman, M. Munsif, A.R. Anwar, H. Jamal, S. Malik, N.U. Islam, High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer. Superlattices Microstruct. 139, 10647 (2020)
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