Effect of localized states on internal quantum efficiency of III-nitride LEDs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?
2. On the origin of IQE-‘droop’ in InGaN LEDs
3. Auger recombination rates in nitrides from first principles
4. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
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