Polar ( In , Ga ) N / GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem-Reference-Cited by-同舟云学术

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Polar ( In , Ga ) N / GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem

Published:2020-04-27 Issue:4 Volume:13 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Tanner Daniel S.P.,Dawson Philip,Kappers Menno J.,Oliver Rachel A.,Schulz Stefan

Funder

Science Foundation Ireland

Sustainable Energy Authority of Ireland

UK Engineering and Physical Sciences Research Council

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.13.044068/fulltext

Reference82 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices

2. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

3. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

4. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

5. Solid-State Lighting

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