Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126815
Reference13 articles.
1. Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
2. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
3. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
4. Solid phase immiscibility in GaInN
5. Preparation and optical properties of Ga1−xInxN thin films
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