Luminescence properties of Er implanted p-type and n-type 3C SiC/Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
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2. Range and annealing behavior of Er ions implanted in SiC;Acta Physica Sinica;2011
3. Investigation of the lateral spread of Er ions implanted in 6H-SiC;Acta Physica Sinica;2010
4. Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films;Journal of Materials Research;2004-08
5. In-Situ Er-Doping of SiC Bulk Single Crystals;Materials Science Forum;2004-06
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