Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars-Reference-Cited by-同舟云学术

Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

Published:2021-10-14 Issue:14 Volume:130 Page:145101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Parker R. A.¹,Dontschuk N.¹^ORCID,Sato S.-I.²^ORCID,Lew C. T.-K.¹^ORCID,Reineck P.³^ORCID,Nadarajah A.¹,Ohshima T.²^ORCID,Gibson B. C.³^ORCID,Castelletto S.⁴^ORCID,McCallum J. C.¹^ORCID,Johnson B. C.¹⁴^ORCID

Affiliation:

1. School of Physics, University of Melbourne, Parkville, Victoria 3010, Australia

2. Quantum Beam Science Research Directorate, National Institutes for Quantum Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan

3. ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, Victoria 3001, Australia

4. School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia

Funder

Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology

Australian Research Council Centre of Excellence for Nanoscale BioPhotonics

JSPS KAKENHI

Australian Research Council DECRA Fellowship

Australian Research Council Linkage Grant

QST International Research Initiative

RMIT Vice-Chancellors Fellowship

Australian Research Council LIEF

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0055100

Reference45 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

3. A silicon carbide room-temperature single-photon source

4. Coherent control of single spins in silicon carbide at room temperature

5. Isolated electron spins in silicon carbide with millisecond coherence times

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