Optical activation of Er3+ in silicon co-implanted with carbon-Reference-Cited by-同舟云学术

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Optical activation of Er3+ in silicon co-implanted with carbon

Published:1995-12 Issue:1-4 Volume:106 Page:477-479
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Uekusa S.,Shimazu K.,Majima A.,Yabuta K.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. S. Uekusa, T. Ohshima, A. Majima and M. Kumagai, EL '94 Collected Abstracts of 7th Int. workshop on Electroluminescence.

2. 1.54 μm luminescence of Er-MeV implanted silicon

3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallinity and Photoluminescence Evaluation of Er-Implanted n-Type 4H-SiC Subjected to an Annealing Process;Materials Science Forum;2004-06

2. Photoluminescence From Er− Implanted 4h And 6h-SiC;MRS Proceedings;2001

3. Influence of Er depth profiles on luminescence properties of Er-doped GaN;MRS Proceedings;2000

4. Photoluminescence from Er-implanted polycrystalline 3C SiC;IEEE Transactions on Electron Devices;1999-03

5. Luminescence properties of Er implanted p-type and n-type 3C SiC/Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

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