Separation of vacancy and interstitial depth profiles in proton- and boron-implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference26 articles.
1. Doping of Crystals by Ion Bombardment to Produce Solid State Detectors
2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3. Point defects and dopant diffusion in silicon
4. Reduction of boron diffusion in silicon by 1 MeV29Si+irradiation
5. The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants
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1. Strain-driven defect evolution in Sn+ implanted Si/SiGe multilayer structure;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05
2. Temperature-dependent growth and transient state of hydrogen-induced nanocavities in silicon;Journal of Applied Physics;2008-08
3. Temperature effect on defect evolution in 800keV Ge-implanted Si/SiGe multi-layered structure;Physica B: Condensed Matter;2003-12
4. Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures;Physical Review B;2003-06-11
5. Nanovoids in MBE-grown SiGe alloys implantedin situwithGe+ions;Physical Review B;2003-06-11
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