The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Studies of anomalous diffusion of impurities in silicon
2. Transient boron diffusion in ion‐implanted crystalline and amorphous silicon
3. Transient diffusion of low‐concentration B in Si due to29Si implantation damage
4. Impurity diffusion via an intermediate species: The B-Si system
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1. Structural characterisation of self-implanted Si after HT-HP treatment;Materials Science and Engineering: B;2005-12
2. Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation;Journal of Applied Physics;2004-07
3. Enhancement of boron solid solubility in Si by point-defect engineering;Applied Physics Letters;2004-04-26
4. Vacancy and interstitial depth profiles in ion-implanted silicon;Journal of Applied Physics;2003-01-15
5. Enhanced low temperature electrical activation of B in Si;Applied Physics Letters;2003-01-13
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