Vacancy and interstitial depth profiles in ion-implanted silicon-Reference-Cited by-同舟云学术

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Vacancy and interstitial depth profiles in ion-implanted silicon

Published:2003-01-15 Issue:2 Volume:93 Page:871-877
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lévêque P.,Nielsen H. Kortegaard,Pellegrino P.,Hallén A.,Svensson B. G.,Kuznetsov A. Yu.,Wong-Leung J.,Jagadish C.,Privitera V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1528304

Reference31 articles.

1. Doping of Crystals by Ion Bombardment to Produce Solid State Detectors

2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

3. Point defects and dopant diffusion in silicon

4. Reduction of boron diffusion in silicon by 1 MeV29Si+irradiation

5. The damage recovery and electrical activation of shallow boron implants in silicon: The effects of high energy implants

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1. Absorption enhancement in visible range from Fano resonant silicon nanoparticle arrays embedded in single crystal Mg:Er:LiNbO₃ synthesized by direct ion implantation;Nanotechnology;2022-06-20

2. Ion beam tools for nondestructive in-situ and in-operando composition analysis and modification of materials at the Tandem Laboratory in Uppsala;Journal of Instrumentation;2022-04-01

3. Reductions in the thermal conductivity of irradiated silicon governed by displacement damage;Physical Review B;2021-10-13

4. Correlation between strain and defects in Bi implanted Si;Journal of Physics and Chemistry of Solids;2016-06

5. Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si;Journal of Electronic Materials;2016-02-29

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