Temperature effect on defect evolution in 800keV Ge-implanted Si/SiGe multi-layered structure-Reference-Cited by-同舟云学术

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Temperature effect on defect evolution in 800keV Ge-implanted Si/SiGe multi-layered structure

Published:2003-12 Issue: Volume:340-342 Page:813-817
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Gaiduk P.I.,Larsen A.Nylandsted,Hansen J.Lundsgaard,Wendler E.,Wesch W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. G.D. Watkins, in: Radiation Damage in Semiconductors, P. Baruch (Ed.), Dunod, Paris, 1964, p. 97.

2. Point defects and dopant diffusion in silicon

3. Nonequilibrium point defects and diffusion in silicon

4. Gettering issues using MeV ion implantation

5. Defects in MeV Si‐implanted Si probed with positrons

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1. Structural and Optical Properties of SiC/Si Heterostructures Obtained Using Rapid Vacuum-Thermal Carbidization of Silicon;Journal of Applied Spectroscopy;2022-05

2. STRUCTURAL AND OPTICAL PROPERTIES OF SiC/Si HETEROSTRUCTURES OBTAINED USING RAPID VACCUM-THERMAL CARBIDIZATION OF SILICON;Journal of Applied Spectroscopy;2022-03-18

3. Strain-Driven Self-Assembling of Nano-Voids and Formation of Core-Shell Bubbles in SiSn/Si Layers;physica status solidi (b);2018-07-27

4. Self-assembled Au dots in SiGe/Si layers for plasmonic application;physica status solidi (a);2014-10-03

5. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures;Microelectronic Engineering;2014-08

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