Defects in MeV Si‐implanted Si probed with positrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354813
Reference17 articles.
1. Defect formation in H implantation of crystalline Si
2. Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam
3. Defect formation in implantation of crystalline Si by MeV Si ions
4. Ion-beam-induced damage in silicon studied using variable-energy positrons, Rutherford backscattering, and infrared absorption
5. Defects in oxygen-implanted silicon-on-insulator structures probed with positrons
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