Defect formation in implantation of crystalline Si by MeV Si ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345709
Reference19 articles.
1. Ion-induced defects in semiconductors
2. Damage accumulation in hydrogen-implanted silicon
3. Defect formation in H implantation of crystalline Si
4. MeV implantation for VLSI
5. Range distributions of MeV implants in silicon
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3. Positron annihilation in silicon in thermal equilibrium at high temperature;Journal of Physics: Condensed Matter;2000-01-10
4. Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements;Journal of Applied Physics;1999-07
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