He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement-Reference-Cited by-同舟云学术

He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement

Published:2000-03 Issue: Volume:161-163 Page:424-428
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Khánh N.Q,Zolnai Z,Lohner T,Tóth L,Dobos L,Gyulai J

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference14 articles.

1. W.J. Choyke, H. Matsunami, G. Pensl (Eds.), Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology, Akademie Verlag, Berlin, 1997

2. In situ and ex situ investigation of ion-beam-induced amorphization in α-SiC

3. Optical defects in ion damaged 6H-silicon carbide

4. Amorphization and defect recombination in ion implanted silicon carbide

5. Ion implantation induced swelling in 6H-SiC

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