Optical defects in ion damaged 6H-silicon carbide
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. SiC bipolar devices
2. Optimum semiconductors for high-power electronics
3. Electrical properties of ion‐implantedp‐njunction diodes in β‐SiC
4. High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films
5. Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization
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1. Effect of Very High-Fluence Proton Radiation on 6H-SiC Photoconductive Proton Detectors;IEEE Electron Device Letters;2019-12
2. Damage produced on GaN surface by highly charged Kr q+ irradiation;Nuclear Science and Techniques;2017-11-16
3. Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-12
4. Structures and optical properties of Kr23+ and Ne8+-irradiated GaN epi-layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
5. Strain and amorphization under light-ion implantation in SiC;EPL (Europhysics Letters);2012-05-01
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