Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

Author:

Kuhudzai R.J.,Malherbe J.B.,van der Berg N.G.,Hlatshwayo T.T.,Odutemowo O.,Prinsloo L.C.,Buys A.V.,Erasmus R.,Wendler E.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Microstructure evolution of iron precipitates in (Fe, He)-irradiated 6H-SiC: A combined TEM and multiscale modeling;Journal of Nuclear Materials;2023-10

2. Positron annihilation studies on N+ implantation induced vacancy type defects and its recovery in SI: 6H- SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-10

3. Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis;Applied Surface Science;2021-02

4. The structural evolution of light-ion implanted 6H-SiC single crystal: Comparison of the effect of helium and hydrogen;Acta Materialia;2020-04

5. Defects in hydrogen implanted SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-12

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