Damage accumulation in nitrogen implanted 6H‐SiC: Dependence on the direction of ion incidence and on the ion fluence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2409609
Reference53 articles.
1. Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC
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3. Formation and annealing of nitrogen-related complexes in SiC
4. Cascade overlap and amorphization in3C−SiC:Defect accumulation, topological features, and disordering
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