Ion implantation-induced damage depth profile determination in SiC by means of RBS/C and bevelling technique
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference24 articles.
1. Amorphous and Crystalline Silicon Carbide;Powell,1989
2. A.V. Chadwick, M. Terenzi (Eds.), Defects in Solids, Modern Techniques, NATO ASI Series, Series B: Physics, 147, 1986.
3. p-Type doping of SiC by high dose Al implantation—problems and progress
4. Ion-beam induced damage and annealing behaviour in SiC
5. He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling and simulation of 4H-SiC field effect transistor;SPIE Proceedings;2017-08-07
2. Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology;Acta Physica Polonica A;2017-08
3. 4H-SiC photodiode model for DC SPICE circuit simulation;Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2015;2015-09-11
4. Surface characterization of Mo-implanted 6H–SiC by high temperature non-reactive wetting tests with the Ni–56Si alloy;Ceramics International;2014-06
5. Large-area transparent in visible range silicon carbide photodiode;Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013;2013-10-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3