Phosphorus electrical activation in high energy P and high flux silicon implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. High energy ion implantation for C-MOS isolation n-wells technology: Problems related to the use of multicharged phosphorous ions in an industrial context
2. Annealing of damage-induced deep levels in MeV Si-implanted GaAs
3. Carrier concentration profiles in multiply implanted silicon with 0.5–7.5 MeV phosphorus
4. Ranges, straggling and carrier concentration profiles of 0.5–6.0 MeV phosphorus in silicon
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3. Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B+ and P2+ implantation doping;Thin Solid Films;2009-06
4. Refractive index, free carrier concentration, and mobility depth profiles of ion implanted Si: optical investigation using FTIR spectroscopy;Journal of the Optical Society of America B;2008-04-30
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