Ranges, straggling and carrier concentration profiles of 0.5–6.0 MeV phosphorus in silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference9 articles.
1. Experimental Evaluation of High Energy Ion Implantation Gradients for Possible Fabrication of a Transistor Pedestal Collector
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1. Fractal Pattern Growth in Ti-Implanted Steel with High Ion Flux;Chinese Physics Letters;2002-05-28
2. Phosphorus electrical activation in high energy P and high flux silicon implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-02
3. Formation and growth of fractal patterns in high energy P+-implanted silicon and N+Zn-implanted SiO2/GaAsP during thermal annealing;Science in China Series E: Technological Sciences;1997-08
4. The behavior of high energy multiple P+ (0.5–7.5 MeV) and B+ implanted silicon and rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-04
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