Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B+ and P2+ implantation doping

Author:

Katsidis C.C.,Siapkas D.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. Ion Implantation Science and Technology;Gyulai,1988

2. Semiconductor Materials and Process Technology Handbook for Very Large Scale Integration (VLSI) and Ultra Large Scale Integration (ULSI);Fair,1988

3. Phosphorus electrical activation in high energy P and high flux silicon implanted silicon

4. Annealing behavior of low-energy ion-implanted phosphorus in silicon

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1. Gibbs free energy of gaseous phosphorus dimer;Chemical Engineering Science;2018-11

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