Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions-Reference-Cited by-同舟云学术

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions

Published:2021-11-12 Issue:3 Volume:34 Page:2103235
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Jakob Alexander M.¹^ORCID,Robson Simon G.¹^ORCID,Schmitt Vivien²^ORCID,Mourik Vincent²^ORCID,Posselt Matthias³^ORCID,Spemann Daniel¹⁴^ORCID,Johnson Brett C.¹^ORCID,Firgau Hannes R.²^ORCID,Mayes Edwin⁵^ORCID,McCallum Jeffrey C.¹^ORCID,Morello Andrea²^ORCID,Jamieson David N.¹^ORCID

Affiliation:

1. School of Physics ARC Centre for Quantum Computation and Communication Technology University of Melbourne Parkville VIC 3010 Australia

2. School of Electrical Engineering and Telecommunications ARC Centre for Quantum Computation and Communication Technology UNSW Sydney Sydney NSW 2052 Australia

3. Helmholtz‐Zentrum Dresden‐Rossendorf (HZDR) Dresden 01328 Saxony Germany

4. Leibniz Institute of Surface Engineering (IOM) Leipzig 04318 Saxony Germany

5. RMIT Microscopy and Microanalysis Facility RMIT University Melbourne VIC 3001 Australia

Funder

Army Research Office

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202103235

Reference64 articles.