High energy electron irradiation of ion implanted MOS structures with different oxide thickness
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Interaction between implanted hydrogen or nitrogen atoms and oxygen-related defects in germanium
2. Radiation defects passivation by neutron irradiation of hydrogen-implanted silicon
3. UV-Radiation Annealing of the Electron- and X-Irradiation Damaged CMOS Transistors
4. Electron irradiation of ion-implanted n-type Si-SiO 2 structures studied by deep-level transient spectroscopy
5. Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures
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1. MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures;Ion Implantation - Research and Application;2017-06-14
2. Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure;Technical Physics;2009-02
3. Characteristics of the electron-emission defects introduced in Si–SiO2 structures by MeV electron irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-12
4. Radiation defects introduced by MeV electrons in argon implanted MOS structures;Applied Physics A;2008-06-27
5. 60Co γ-ray irradiation effects on dielectric characteristics of tin oxide films of different thicknesses on n-type Si(111) substrates;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-07
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