Electron irradiation of ion-implanted n-type Si-SiO 2 structures studied by deep-level transient spectroscopy-Reference-Cited by-同舟云学术

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Electron irradiation of ion-implanted n-type Si-SiO 2 structures studied by deep-level transient spectroscopy

Published:1998-05-01 Issue:5 Volume:66 Page:561-563
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Kaschieva S.,Stefanov K.G.,Karpuzov D.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390050713.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring current conduction mechanisms in 6 MeV $\text{Si}^{3+}$ ion irradiated Au/SiO₂/beta-Ga₂O₃ metal-oxide-semiconductor devices;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26

2. MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures;Ion Implantation - Research and Application;2017-06-14

3. X‐ray diffraction characterization of microdefects in silicon crystals after high‐energy electron irradiation;physica status solidi (a);2011-10-11

4. Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure;Technical Physics;2009-02

5. Radiation defects introduced by MeV electrons in argon implanted MOS structures;Applied Physics A;2008-06-27

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