Exploring current conduction mechanisms in 6 MeV $\text{Si}^{3+}$ ion irradiated Au/SiO<sub>2</sub>/beta-Ga<sub>2</sub>O<sub>3</sub> metal-oxide-semiconductor devices-Reference-Cited by-同舟云学术

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Exploring current conduction mechanisms in 6 MeV $\text{Si}^{3+}$ ion irradiated Au/SiO₂/beta-Ga₂O₃ metal-oxide-semiconductor devices

Published:2020-11-26 Issue: Volume: Page:
ISSN:
Container-title:2020 5th IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Manikanthababu N.¹,Tak B. R.²,Sheoran Hardhyan²,Prajna K.³,Panigrahi B. K.¹,Singh R.²

Affiliation:

1. Materials Science Group, Indira Gandhi Center for Atomic Research,Kalpakkam,India,603102

2. Indian Institute of Technology Delhi,Department of Physics,New Delhi,India,110016

3. MMG Indira Gandhi Centre for Atomic Research,Non-Destructive Evaluation Division,Kalpakkam,India,603102

Funder

SERB

DST

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9776592/9776648/09777064.pdf?arnumber=9777064

Reference27 articles.

1. Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

2. Point defects induced work function modulation of β-Ga2O3

3. Al2O3/ $\beta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing

4. C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3

5. Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS;gusev;Microelectron Eng,1999

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2. High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities;ACS Applied Materials & Interfaces;2022-11-08

3. Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices;Crystals;2022-07-21

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