MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures-Reference-Cited by-同舟云学术

MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures

Published:2017-06-14 Issue: Volume: Page:
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Container-title:Ion Implantation - Research and Application
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Author:

Kaschieva Sonia B.,Dmitriev Sergey N.

Publisher

InTech

Link

http://www.intechopen.com/download/pdf/54446

Reference9 articles.

1. S. Kaschieva, K. Stefanov, D. Karpusov. Electron irradiation of ion‐implanted n‐type Si‐SiO2 structures studied by DLTS. Appl. Phys. A. 66: 561 (1998).

2. S. Kaschieva, C. Angelov, S.N. Dmitriev. MeV electron irradiation of O+ or P+ implanted Si‐SiO2 structures. J. Optoelectron. Adv. Mater. 11(10): 150 (2009).

3. S. Kaschieva, C. Angelov, S.N. Dmitriev, G. Tsutsumanova. RBS investigation of ion implanted Si‐SiO2 structures irradiated with 20 MeV electrons, Plasma Process. Polym. 3: 233–236 (2006).

4. S. Kaschieva, S.N. Dmitriev. Radiation defects introduced by MeV electrons in argon implanted MOS structures. Appl. Phys. A. 94(2): 257–261 (2009).

5. S. Kaschieva, S. Alexanrdova. High‐energy electron irradiation of ion implanted MOS structures with different oxide thickness. Nucl. Instr. Meth. Phys. Res. B. 174: 324 (2001).

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