RBS Investigation of Ion Implanted SiSiO2 Structures Irradiated with 20 MeV Electrons
Author:
Publisher
Wiley
Subject
Polymers and Plastics,Condensed Matter Physics
Reference9 articles.
1. Influence of high energy electron irradiation on the interface states of the Si-SiO2 system
2. Electron irradiation of ion-implanted n-type Si-SiO 2 structures studied by deep-level transient spectroscopy
3. High energy electron irradiation of ion implanted MOS structures with different oxide thickness
4. In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO2 layers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+;Journal of Physics: Conference Series;2018-03
2. MeV Electron Irradiation of Ion-Implanted Si-SiO2 Structures;Ion Implantation - Research and Application;2017-06-14
3. Formation of Si nanocrystals in ion implanted Si-SiO2structures by MeV electron irradiation;Journal of Physics: Conference Series;2012-03-29
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