Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures-Reference-Cited by-同舟云学术

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Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures

Published:1998-10 Issue:2 Volume:51 Page:235-237
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Stefanov KG,Kaschieva S,Karpuzov D

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference5 articles.

1. Kaschieva, S., Nuclear Instr. Meth., 1994, B93, 274.

2. Studies of Recombination Centers in Gamma-Irradiatedp-Type Sillicon

3. Cheng, I. J., in Radiation Effects in Semiconductors, ed. F. L. Vook, Plenum Press, New York, 1988.

4. Konozenko, I. D. and Semeniuk, A. K., in Radiation Effect in Si, Naukova Dumka, Kiev, 1974.

5. Vavilov, V. and Uhin, N., in Radiation Effects in Semiconductors, Atomizdat Moscow, 1969.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+;Journal of Physics: Conference Series;2018-03

2. Improvement of immunity on MeV electron radiation of MOS structures by means of ultra-shallow fluorine implantation;Microelectronics Reliability;2011-07

3. Interface trap generation in MOS structures by high-energy electron irradiation;Journal of Physics: Conference Series;2010-11-01

4. Radiation defects introduced by MeV electrons in argon implanted MOS structures;Applied Physics A;2008-06-27

5. Investigation of p-Type MOS Structure Irradiated with 23 MeV Electrons;Plasma Processes and Polymers;2006-02-17

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