Improvement of immunity on MeV electron radiation of MOS structures by means of ultra-shallow fluorine implantation

Author:

Kalisz Małgorzata,Mroczyński Robert,Beck Romuald B.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Electrical characterization of defects induced by 12 MeV electrons in p-type Si–SiO2 structures;Stefanov;Vacuum,1998

2. Radiation effects in MOS oxides;Schwank;IEEE Trans Nucl Sci,2008

3. Novel method of improving electrical properties of thin PECVD oxide films by fluorination of silicon surface region by RIE in RF CF4 plasma;Kalisz;J Telecom Inform Technol,2010

4. Kalisz M. et al. Effect of the fluorine implantation from r.f. CF4 plasma on electrical characteristics of MIS structures with PECVD silicon oxynitride layers Thin Solid Films, submitted for publication.

5. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics;Garcia;J Vac Sci Technol B,2009

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