Author:
Kalisz Małgorzata,Mroczyński Robert,Beck Romuald B.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Electrical characterization of defects induced by 12 MeV electrons in p-type Si–SiO2 structures;Stefanov;Vacuum,1998
2. Radiation effects in MOS oxides;Schwank;IEEE Trans Nucl Sci,2008
3. Novel method of improving electrical properties of thin PECVD oxide films by fluorination of silicon surface region by RIE in RF CF4 plasma;Kalisz;J Telecom Inform Technol,2010
4. Kalisz M. et al. Effect of the fluorine implantation from r.f. CF4 plasma on electrical characteristics of MIS structures with PECVD silicon oxynitride layers Thin Solid Films, submitted for publication.
5. Irradiation effect on dielectric properties of hafnium and gadolinium oxide gate dielectrics;Garcia;J Vac Sci Technol B,2009
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献