1. High energy electron irradiation of ion implanted MOS structures with different oxide thickness
2. Radiation defects induced by 20MeV electrons in MOS structures
3. A.F. Zatsepin, D.Yu. Biryukov, V.S. Kortov, S.Yu. Grohovskii, E.A. Buntov, Patent of the Russian Federation, Certificate JV No. 2006610036 (10 January 2006) of official computer program registration: Computer program for OSEE spectroscopy data visualization (≪Photoelectron≫) (in Russian).
4. A.F. Zatsepin, D. Yu. Biryukov, V.S. Kortov, S. Yu. Grohovskii, E.A. Buntov, Patent of the Russian Federation, Certificate No. 2006610037 (10 January 2006) of official computer program registration: Computer program for processing and analysis of OSEE spectra (≪Spectrograph≫) (in Russian).
5. Analysis of the Nonselective Spectra of Photostimulated Electron Emission from the Surface of Irradiated Dielectrics