Band offset in GaAlAs and InGaAs: InP heterojunctions by electrochemical CV profiling
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
2. A critical review of heterojunction band offsets
3. Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy
4. Measurement of isotype heterojunction barriers byC‐Vprofiling
5. Band discontinuity for GaAs/AlGaAs heterojunction determined byC‐Vprofiling technique
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2. Enhanced broadband absorption in nanowire arrays with integrated Bragg reflectors;Nanophotonics;2018-05-24
3. InGaAs/InP hot electron transistors grown by chemical beam epitaxy;Applied Physics Letters;1992-07-13
4. Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunnelling diodes;Superlattices and Microstructures;1992-01
5. Improved method for depth profiling of multilayer structures;Applied Surface Science;1991-06
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