Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunnelling diodes
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells
2. Optical studies inInxGa1−xAs/GaAs strained-layer superlattices
3. Photoreflectance study of narrow-well strained-layerInxGa1−xAs/GaAs coupled multiple-quantum-well structures
4. Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells
5. Band offset in GaAlAs and InGaAs: InP heterojunctions by electrochemical CV profiling
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence excitation spectroscopy for structural and electronic characterization of resonant tunneling diodes for THz applications;AIP Advances;2021-03-01
2. Piezoelectric‐induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixing;Applied Physics Letters;1993-08-09
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