Piezoelectric‐induced current asymmetry in [111] InGaAs/InAlAs resonant tunneling diodes for microwave mixing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110777
Reference12 articles.
1. Tunneling in a finite superlattice
2. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
3. Strain-generated electric fields in [111] growth axis strained-layer superlattices
4. Enhanced carrier densities and device performance in piezoelectric pseudomorphic high‐electron mobility transistor structures
5. Physics of resonant tunneling. The one-dimensional double-barrier case
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3. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes;Physical Review X;2017-10-23
4. Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires;Journal of Applied Physics;2004-01
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