Enhanced carrier densities and device performance in piezoelectric pseudomorphic high‐electron mobility transistor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107694
Reference11 articles.
1. Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs
2. Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
3. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
4. Theory of semiconductor superlattice electronic structure
5. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices
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1. InGaAs/GaAs quantum wells and quantum dots on (111)B orientation;Solid State Communications;2001-03
2. Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates;Applied Physics Letters;2000-12-25
3. Electronic Levels of Quantum Dots: A Variational Approach;Journal of the Physical Society of Japan;2000-12-15
4. Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate;Japanese Journal of Applied Physics;2000-06-15
5. <111>-ORIENTED GaAs/AlGaAs AND InGaAs/GaAs QUANTUM WELL STRUCTURES FABRICATED BY MOVPE AND THEIR OPTICAL AND STRAIN-INDUCED PIEZOELECTRIC PROPERTIES;International Journal of High Speed Electronics and Systems;2000-03
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