Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332836
Reference12 articles.
1. Growth and characterization of heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy
2. Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
3. The homoepitaxial growth of GaAs(111)A and (111)B by molecular beam epitaxy: an investigation of the temperature-dependent surface reconstructions and bulk electrical conductivity transitions
4. Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
5. Optical properties of strained-layer superlattices with growth axis along [111]
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1. Theoretical analysis of a circular hybrid plasmonic waveguide to design a hybrid plasmonic nano-antenna;Scientific Reports;2020-09-15
2. On the optimum off-cut angle for the growth on InP(111)B substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2019-05
3. Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV;2018-02-21
4. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
5. Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A;physica status solidi (b);2015-12-02
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