Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy-Reference-Cited by-同舟云学术

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Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy

Published:1987-07 Issue:4 Volume:5 Page:1215
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lang D. V.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS;Journal of Applied Physics;2003-05

2. Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy;Journal of Applied Physics;1998-10

3. A Fundamental Study on n‐ and p ‐ In0.53Ga0.47As in H 2 O 2 Solution: Electrochemical Behavior and Selective Etching vs. InP;Journal of The Electrochemical Society;1997-04-01

4. Quantum confinement of holes inSi1−xGex/Si quantum wells studied by admittance spectroscopy;Physical Review B;1995-02-15

5. Molecular‐beam‐epitaxial‐grown n‐GaAs1−xSbx/N‐GaAs heterostructures characterized by admittance spectroscopy;Journal of Applied Physics;1993-06

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