MBE growth of AlGaAs/GaAs superlattices on GaAs (110) substrates-Reference-Cited by-同舟云学术

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MBE growth of AlGaAs/GaAs superlattices on GaAs (110) substrates

Published:1990-01 Issue:4 Volume:7 Page:279-282
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sato Masamichi,Maehashi Kenzo,Asahi Hajime,Hasegawa Shigehiko,Nakashima Hisao

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Instabilities of (110) III–V compounds grown by molecular beam epitaxy

2. Interface morphology studies of (110) and (111) Ge‐GaAs grown by molecular beam epitaxy

3. LEED and AES of stoichiometric and arsenic-rich GaAs(110) surfaces prepared by molecular beam epitaxy

4. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide

5. Photoluminescence from AlGaAs-GaAs single quantum wells grown on variously oriented GaAs substrates by MBE

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2. GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates;Crystals;2022-12-24

3. Polarity-Driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires;Nano Letters;2013-07-02

4. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011

5. Atomic hydrogen assisted molecular beam epitaxy on patterned GaAs (311)A substrates: Formation of highly uniform quantum-dot arrays;Journal of Electronic Materials;1998-12

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