1. Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra;Semiconductors;2020-11
2. Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates;Optics and Spectroscopy;2020-07
3. Breakdown of Corner States and Carrier Localization by Monolayer Fluctuations in Radial Nanowire Quantum Wells;Nano Letters;2019-04-23
4. Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV;2018-02-21
5. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01