Subject
Physics and Astronomy (miscellaneous)
Cited by
23 articles.
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1. Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
2. In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09
3. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs;Molecular Beam Epitaxy;1995
4. Initial growth process of GaAs on Ge substrate and pseudomorphic Si interlayer;Journal of Crystal Growth;1993-02
5. Heteroepitaxial growth of polar semiconductors on non-polar substrates;Materials Science and Engineering: B;1992-08