In situ observation of macrostep formation on misoriented GaAs(111)B by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
2. Metalorganic Chemical Vapor Deposition of GaAs on (111)B Substrates by Using Diethylgalliumchloride
3. Periodic lateral structure of Al content modulations in AlGaAs grown on vicinal (111)A GaAs by molecular beam epitaxy
4. Formation and photoluminescence of quantum wire structures on vicinal (110) GaAs substrates by MBE
5. Surface structure of high- and low-index GaAs surfaces: direct formation of quantum-dot and quantum-wire structures
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1. Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates;physica status solidi (a);2019-08-08
2. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-01
3. Direct measurement of lateral macrostep velocity on an AlN vicinal surface by transmission electron microscopy;Journal of Applied Physics;2012-05-15
4. AFM Investigation on Step Bunching on (100) Face of KDP Crystal;Journal of Inorganic Materials;2010-12-01
5. Growth Control of GaAs Epilayers with Specular Surface on Nonmisoriented (111)B Substrates by MBE;ECS Transactions;2010-11-23
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